Q-Cells Sets New World Record

18.5 Percent Cell Efficiency with Multi-Crystalline Modules

January 20, 2012

Q-Cells SE has set two new world records for multi-crystalline solar modules. The independent calibration laboratory of the Fraunhofer Institute for Solar Energy Systems ISE in Freiburg confirmed a module efficiency of 18.5 per cent based on aperture area for a module with 60 multicrystalline solar cells.

This efficiency record breaks Q-Cells’ previous world record of 18.1 percent set in the summer of 2011. Additionally, the independent calibration laboratory of the Fraunhofer ISE confirmed a peak output of 283 watts for a quasi-monocrystalline module. Q-Cells has also held the current world record in the field of mono-silicon modules since September 2011, with a performance class reaching 287 watts.

“With these world records, Q-Cells is once again underscoring its technology leading position in terms of efficiency as well as the output of its products,” says Peter Wawer, Head of Technology at Q-Cells SE. “Thanks to our close cooperation between research, development, and production at the Thalheim location, we are able to bring innovative technologies into serial production quickly. This allows us to offer our clients top quality products with sustainable yields.”

Both records are based on the company’s Q.antum cell concept. Market introduction of these solar cells and modules is planned for 2012. Pilot production of the new cell concept is now underway in Thalheim. In April 2011, the Q.antum solar cell set the world record for large-scale multicrystalline solar cells with an efficiency of 19.5 per cent. Multicrystalline or quasi-monocrystalline silicon wafers with a thickness of 180 µm, mirrored and passivated with functional nano-layers on the rear side, are the base material for the solar cells that were used. The innovative structure of the rear side, made of dielectric layers in combination with local contacts, improves the optical and electrical characteristics of the solar cell and results in a significant performance increase compared to the standard BSF (back surface field) technology which is currently in widespread use. This innovative structure of the reverse side is compatible with various grades of silicon and very thin wafers.

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